Semiconductor device and method of production

Details Semiconductor device and method of production Semiconductor device and method of production

1991-05-13

1992-03-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437 44, 437 57, 437 34, 437192, 437200, 437238, 357 71, H01L 21265

Patent

active

050932764

ABSTRACT:
A novel semiconductor device and method of production of such a device are provided. Both the N and P channels of the novel semiconductor device are formed by contact self-alignment, thereby permitting high speed operation and high density integration to be realized. The formation of the channels by contact self-alignment is accomplished by depositing a P type polysilicon layer on an N well region and an N type polysilicon layer on a P well region. A silicide layer is formed over both the P and N type polysilicon layers to form a polycide.

REFERENCES:
patent: 4333099 (1982-06-01), Tanguay et al.
patent: 4432132 (1984-02-01), Kinsbron et al.
patent: 4476482 (1984-10-01), Scott et al.
patent: 4477310 (1984-10-01), Park et al.
patent: 4528744 (1985-07-01), Shibata
patent: 4546535 (1985-10-01), Shepard
patent: 4616401 (1986-10-01), Takeuchi
patent: 4682403 (1987-07-01), Hartmann et al.
patent: 4703552 (1987-11-01), Baldi et al.

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