Fishing – trapping – and vermin destroying
Patent
1991-01-02
1992-03-03
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 40, 437190, 437192, 437200, H01L 21265
Patent
active
050932748
ABSTRACT:
A semiconductor device, such as a MESFET having a self-aligned gate, and a method for production thereof. A triple layer film is formed on the semiconductor substrate, then anisotropically etched to produce a gate structure which is used as a mask in an ion implantation step for forming a source and drain. The triple layer film includes a lower high melting point metal silicide, an upper similar metal silicide and an intermediate high melting point metal layer. The first layer forms a Schottky barrier with the semiconductor substrate and serves as a metal silicide gate. The upper layer serves as a dummy gate. The intermediate metal layer serves to protect the metal silicide layers during the etching step, serves as an etchant stop during removal of the dummy gate, and also serves to protect the Schottky barrier after the device is completed. After removal of the dummy gate, a low resistance metal such as gold is self-alignedly deposited in its place and serves to improve the high frequency performance of the device.
REFERENCES:
patent: 4285761 (1981-08-01), Fatula, Jr. et al.
patent: 4322453 (1982-03-01), Miller
patent: 4574298 (1986-03-01), Yamagishi et al.
patent: 4700455 (1987-10-01), Shimada et al.
patent: 4923823 (1990-05-01), Kohno
Hearn Brian E.
Mitsubishi Denki & Kabushiki Kaisha
Picardat Kevin M.
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