Manufacturing method for a self-aligned emitter-base-complex for

Details Manufacturing method for a self-aligned emitter-base-complex for Manufacturing method for a self-aligned emitter-base-complex for

1990-12-03

1992-03-03

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

357 34, 148DIG10, H01L 21265, H01L 2970

Patent

active

050932721

ABSTRACT:
Method for manufacturing a self-aligned emitter-base complex whereby a sequence of epitaxial layers, which corresponds to the optimal base-emitter layer sequence in the re-etched part of the heterobipolar transistor is grown. Subsequently, the base implantation is introduced using a dummy-emitter as a mask. Using a dielectric mask covering the region not covered by the dummy-emitter, after the removal of the dummy-emitter the emitter contact layers are selectively grown in its region. The contacting is then provided.

REFERENCES:
patent: 4711701 (1987-12-01), McLevige
patent: 4868633 (1989-09-01), Plumton et al.
"GaAs/(GaAl) As Heterojunciton Bipolar Transistors Using a Self-Aligned Substitutional Emitter Process" by M. F. Chang et al., 8179 IEEE Electron Device Letters, EDL-7, No. 1, Jan. 1986, New York, pp. 8-10.

Affiliated with

Also associated with

Rating

Manufacturing method for a self-aligned emitter-base-complex for does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method for a self-aligned emitter-base-complex for, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method for a self-aligned emitter-base-complex for will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-271937