Semiconductor thin film and semiconductor device

Details Semiconductor thin film and semiconductor device Semiconductor thin film and semiconductor device

2011-04-19

2011-04-19

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S072000, C257S064000, C257S065000, C257S066000, C257S069000, C257S070000, C257S347000, C257SE27133, C438S048000, C438S128000, C438S141000, C438S151000, C438S157000

Reexamination Certificate

active

07928438

ABSTRACT:
After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since individual crystal grains have approximately equal orientation, the crystalline semiconductor thin film has substantially no grain boundaries and has such crystallinity as to be considered a single crystal or considered so substantially.

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