Field effect transistor having Ohmic electrode in a recess

Details Field effect transistor having Ohmic electrode in a recess Field effect transistor having Ohmic electrode in a recess

2011-04-12

2011-04-12

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S024000, C257S191000, C257S194000, C438S576000, C438S604000

Reexamination Certificate

active

07923753

ABSTRACT:
The contact resistance between an Ohmic electrode and an electron transit layer is reduced compared with a case in which the Ohmic electrode is provided to a depth less than the heterointerface. As a result, for an Ohmic electrode provided in a structure comprising an electron transit layer formed of a first semiconductor layer formed on a substrate, an electron supply layer comprising a second semiconductor layer forming a heterojunction with the electron transit layer and having a smaller electron affinity than the first semiconductor layer, and a two-dimensional electron layer induced in the electron transit layer in the vicinity of the heterointerface, the end portion of the Ohmic electrode is positioned in the electron transit layer in penetration into the electron supply layer at a depth equal to or greater than the heterointerface.

REFERENCES:
patent: 5198879 (1993-03-01), Ohshima
patent: 5254863 (1993-10-01), Battersby
patent: 6465814 (2002-10-01), Kasahara et al.
patent: 6897137 (2005-05-01), Nguyen et al.
patent: 2005/0087763 (2005-04-01), Kanda et al.
patent: 2005/0139838 (2005-06-01), Murata et al.
patent: 2008/0173898 (2008-07-01), Ohmaki
“Recessed Ohmic AlGaN/AlN/GaN HEMTs Grown on 100-mm-diam. Epitaxial AlN/Sapphire Template”, M. Miyoshi et al, Technical Report of IEICE, ED2004-217, NW2004-224 (Jan. 2005), pp. 31-35.

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