Method for determining native threshold voltage of...

Details Method for determining native threshold voltage of... Method for determining native threshold voltage of...

2011-01-11

2011-01-11

Mai, Son L (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185280, C365S185290, C365S185330

Reexamination Certificate

active

07869283

ABSTRACT:
A method for determining native threshold voltage of nonvolatile memory includes following steps. A memory cell including a control gate, a charge storage layer, a source region, and a drain region is provided. A programming operation is performed on the memory cell by using F-N tunneling effect to obtain a programming curve of time versus threshold voltage. In the programming operation, a positive voltage is applied to the control gate. An erase operation is performed on the memory cell by using F-N tunneling effect to obtain an erasure curve of time versus threshold voltage. In the erase operation, a negative voltage is applied to the control gate. The absolute values of the positive voltage and the negative voltage are the same. The native threshold voltage of memory cell is determined from the cross point of the programming curve and the erasure curve.

REFERENCES:
patent: 6768165 (2004-07-01), Eitan
patent: 7123532 (2006-10-01), Lusky et al.
patent: 2006/0227608 (2006-10-01), Lusky
patent: 2007/0258289 (2007-11-01), Lue

Affiliated with

Also associated with

Rating

Method for determining native threshold voltage of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for determining native threshold voltage of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for determining native threshold voltage of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2708091