Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate
2011-06-14
2011-06-14
Hendrickson, Stuart (Department: 1734)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
C117S013000, C117S023000, C117S073000, C117S206000, C117S223000, C423S348000, C423S658500
Reexamination Certificate
active
07959730
ABSTRACT:
Embodiments of the present invention relate to a process for obtaining silicon crystals from silicon. The method includes contacting silicon powder with a solvent metal to provide a mixture containing silicon, melting the silicon under submersion to provide a first molten liquid, contacting the first molten liquid with a first gas to provide dross and a second molten liquid, separating the dross and the second molten liquid, cooling the second molten liquid to form first silicon crystals and a first mother liquid and separating the first silicon crystals and the first mother liquid.
REFERENCES:
patent: 4094731 (1978-06-01), Keyser et al.
patent: 4124410 (1978-11-01), Kotval et al.
patent: 4312846 (1982-01-01), Dawless
patent: 4312847 (1982-01-01), Dawless
patent: 4312848 (1982-01-01), Dawless
patent: 4312849 (1982-01-01), Kramer
patent: 4354987 (1982-10-01), Iya
patent: 4588571 (1986-05-01), Bildl et al.
patent: 4676968 (1987-06-01), Sanjurjo et al.
patent: 4787986 (1988-11-01), Dietl et al.
patent: 4900532 (1990-02-01), Kurz et al.
patent: 6013872 (2000-01-01), Woditsch et al.
patent: 7381392 (2008-06-01), Enebakk et al.
patent: 2006/0051670 (2006-03-01), Aramata et al.
patent: 2008/0253955 (2008-10-01), Leblanc et al.
patent: 2009/0274607 (2009-11-01), Nichol
patent: WO 2009043167 (2009-04-01), None
Metallurg Aluminium, “Modification of Aluminium-Silicon Foundry Alloys” (1998). Visited Apr. 13, 2010 at http://www.metallurgaluminium.com/Downloads/tech—paper—pdfs/Guide—Modif AlSi—Alloys.pdf .
Srivastava et al., “Synthesis, characterizations and applications of some nanomaterials (TiO2 and SiC nanostructured films, organized CNT structures, ZnO structures and CNT-blood platelet clusters).” Pramana—J. Phys. (2005), 65, 4, 581-592.
“International Application Serial No. PCT/CA2008/001750, International Search Report mailed Jan. 22, 2009”.
“International Application Serial No. PCT/CA2008/001750, Written Opinion mailed Jan. 22, 2009”.
6N Silicon Inc.
Berns Daniel
Hendrickson Stuart
Schwegman Lundberg & Woessner, P.A.
LandOfFree
Method for processing silicon powder to obtain silicon crystals does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for processing silicon powder to obtain silicon crystals, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for processing silicon powder to obtain silicon crystals will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2706528