Method of producing photodiode and the photodiode

Details Method of producing photodiode and the photodiode Method of producing photodiode and the photodiode

2011-04-26

2011-04-26

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S073000, C257SE31038

Reexamination Certificate

active

07932115

ABSTRACT:
A photodiode includes a photosensitive element formed in a silicon semiconductor layer on an insulation layer. The photosensitive element includes a low concentration diffusion layer, a P-type high concentration diffusion layer, and an N-type high concentration diffusion layer. A method of producing the photodiode includes the steps of: forming an insulation material layer on the silicon semiconductor layer after the P-type impurity and the N-type impurity are implanted into the low concentration diffusion layer, the P-type high concentration diffusion layer, and the N-type high concentration diffusion layer; forming an opening portion in the insulation material layer in an area for forming the low concentration diffusion layer; and etching the silicon semiconductor layer in the area for forming the low concentration diffusion layer so that a thickness of the silicon semiconductor layer is reduced to a specific level.

REFERENCES:
patent: 7709920 (2010-05-01), Miura
patent: 2008/0296642 (2008-12-01), Miura
patent: 2009/0140368 (2009-06-01), Miura
patent: 2009/0184254 (2009-07-01), Miura
patent: 2009/0184388 (2009-07-01), Izumi
patent: 07-162024 (1995-02-01), None

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