Semiconductor device

Details Semiconductor device Semiconductor device

2011-03-29

2011-03-29

Pham, Hoai V (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S774000, C257SE23145

Reexamination Certificate

active

07915733

ABSTRACT:
A semiconductor device which includes a first wiring with a via connected to the first wiring, a second wiring connected to the via and a dummy via disposed adjacent to the via at a distance of 100 nm or less and formed on the same layer as the via.

REFERENCES:
patent: 6989583 (2006-01-01), Fujii
patent: 2005/0121788 (2005-06-01), Watanabe et al.
patent: 2004-207353 (2004-07-01), None
patent: 2004-296644 (2004-10-01), None
T. Suzuki et al., “Stress migration phenomenon in narrow copper interconnects”, Journal of Applied Physics, Feb. 15, 2007, vol. 101, No. 4, 044513.

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