Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor
Reexamination Certificate
2011-01-11
2011-01-11
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
C257S343000, C257S377000, C257S382000, C257SE29070, C977S707000, C977S762000
Reexamination Certificate
active
07868426
ABSTRACT:
A monolithic pair of nanoscale probes, including: a substrate having a cavity that extends from a surface of the substrate into its body; a dielectric layer formed on the substrate; a pair of nanoscale probe precursors formed over the dielectric layer; a plurality of sub-monolayers of electrode material selectively atomic layer deposited over the pair of nanoscale probe precursors. The dielectric layer includes a window that extends through it to the cavity of the substrate such that a portion of the dielectric layer adjacent to the window extends over the cavity. The pair of nanoscale probe precursors includes a pair of edges facing each other across the window. These edges correspond to tips of the pair of nanoscale probes. The sub-monolayers of electrode material include the pair of edges, so that a distance between the tips of the nanoscale probes is between about 0.1 nm and about 20 nm.
REFERENCES:
patent: 7084507 (2006-08-01), Awano
patent: 7420199 (2008-09-01), Gutsche et al.
patent: 7446025 (2008-11-01), Cohen et al.
patent: 7569846 (2009-08-01), Choi et al.
patent: 7741664 (2010-06-01), Choi et al.
patent: 7776759 (2010-08-01), Lahnor et al.
patent: 2008/0149944 (2008-06-01), Samuelson et al.
patent: 2009/0114903 (2009-05-01), Kalburge
patent: 2009/0200536 (2009-08-01), Van Schaijk et al.
patent: 2009/0200641 (2009-08-01), Hurkx et al.
patent: 2009/0321716 (2009-12-01), Wernersson et al.
patent: 2010/0112748 (2010-05-01), Vidu et al.
patent: 2010/0193768 (2010-08-01), Habib
Guillorn, M. A., et al., “Fabrication of Dissimilar Metal Electrodes with Nanometer Interelectrode Distance for Molecular Electronic Device Characterization,”J. Vac Sci Technol. B, 18:3, May/Jun. 2000, pp. 1177-1181.
Morpurgo, A. F., et al., “Controlled Fabrication of Metallic Electrodes with Atomic Separation,”Applied Physics Letters, 74:14, Apr. 1999, pp. 2084-2086.
Kervennic, Y. V., et al., “Nanometer-Spaced Electrodes with Calibrated Separation,”Applied Physics Letters, 80:2, Jan. 2002, pp. 321-323.
Li, C. Z., et al., “Quantized Tunneling Current in the Metallic Nanogaps Formed by Electrodeposition and Etching,”Applied Physics Letters, 77:24, Dec. 2000, pp. 3995-3997.
Bezryadin, A., et al., “Electrostatic Trapping of Single Conducting Nanoparticles Between Nanoelectrodes,”Applied Physics Letters, 71:9, Sep. 1997, pp. 1273-1275.
Kashimura, Y., et al., “Fabrication of Nano-Gap Electrodes Using Electroplating Technique,”Thin Sold Films, 438-439, 2003, pp. 317-321.
Visconti, P., et al., “Fabrication of Sub-10 nm Planar Nanotips for Transport Experiments of Biomolecules,”Materials Science&Engineering C, vol. 23, 2003, pp. 889-892.
Austin, M., et al., “Fabrication of Nanocontacts for Molecular Devices Using Nanoimprint Lithography,”J. Vac. Sci. Technol. B, 20:2, Mar./Apr. 2002, pp. 665-667.
Park, H., et al., “Fabrication of Metallic Electrodes with Nanometer Separation by Electromigration,”Applied Physics Letters, 75:2, Jul. 1999, pp. 301-303.
Nagase, T., et al., “Fabrication of Nano-Gap Electrodes for Measuring Electrical Properties of Organic Molecules Using a Focused Ion Beam,”Thin Solid Films, 438-439, 2003, pp. 374-377.
He, H. X., et al., “Electrochemical Fabrication of Atomically Thin Metallic Wires and Electrodes Separated with Molecular-Scale Gaps,”Journal of Electroanalytical Chemistry, vol. 511, 2002, pp. 167-172.
Visconti, P., et al., “The Fabrication of Sub-10 nm Planar Electrodes and Their Use for a Molecule-Based Transistor,”Nanothechnology, vol. 15, 2004, pp. 807-811.
Kim, J. C., et al., “Fabrication of Contact Electrodes in Si for Nanoelectronic Devices Using Ion Implantation,”Applied Surface Science, vol. 239, 2005, pp. 335-341.
Kervennic, U. V., et al., “Planar Nanocontacts with Atomically Controlled Separation,”Applied Physics Letters, 3:18, Nov. 2003, pp. 3782-3784.
Deshmukh, M. M., et al., “Fabrication of Asymmetric Electrode Pairs with Nanometer Separation Made of Two Distinct Metals,”Nano Letters, 3:10, 2003, pp. 1383-1385.
Cai, L. T., et al., “Nanowire-Based Molecular Monolayer Junctions: Synthesis, Assembly, and Electrical Characterization,”J. Phys. Chem. B., vol. 108, 2004, pp. 2827-2832.
Itoua, S. et al., “Fabrication and AFM Characterization of a Co-Planar Tunnel Junction with a Less Than 30 nm Interelectrode Gap,”Nanothechnology, vol. 5, 1994, pp. 19-25.
Xiao, X. et al., “Measurement of Single Molecule Conductance: Benzenedithiol and Benzenedimethanethiol,”Nano Letters, 4:2, 2004, pp. 267-271.
Zandbergen, H. W., et al., “Sculpting Nanoelectrodes with a Transmission Electron Beam for Electrical and Geometrical Characterization of Nanoparticles,”Nano Letters, 5:3, 2005, pp. 549-553.
Van Ruitenbeek, J. M., et al, “Adjustable Nanofabricated Atomic Size Contacts,”Rev. Sci. Instrum., 67:1,Jan. 196, pp. 108-111.
Malaquin, L., et al., “Interdigitated Nanoelectrodes for Nanoparticle Detection.”Nanotechnology, vol. 16, 2005, pp. S240- S245.
Kummel, A. C., “How to Assemble a Molecular Junction,”Science, vol. 302, Oct. 2003, pp. 69-70.
Miyazaki, T., et al., “Fabrication of a Nanogap on a Metal Nanowire Using Scanning Probe Lithography,”Jpn. J. Appl . Phys., vol. 40, 2001, pp. 4365-4367.
Steinmann, P., et al., “Fabrication of Metallic Tunnel Junctions for the Scanning Single Electron Transistor Atomic Force Microscope,”J. Vac. Sci. Technol. B, 21:5, Sep./Oct. 2003, pp. 2138-2141.
Boussaad, S., et al., “Atom-Size Gaps and Contacts Between Electrodes Fabricated with a Self-Terminated Electrochemical Method.”Applied Physics Letters, 80:13, Apr. 2002, pp. 2398-2400.
Fischbein, M. D., et al., “Nanogaps by Direct Lithography for High-Resolution Imaging and Electronic Characterization of Nanostructures,”Applied Physics Letters, vol. 88, 2006, pp. 063116-1-063116-3.
Strachan, D. R., “Controlled Fabrication of Nanogaps in Ambient Environment for Molecular Electronics,”Applied Physics Letters, vol. 86, 2005, pp. 043109-1-043109-3.
Lindsay, S., “Single-Molecule Electronic Measurements with Metal Electrodes,”Journal of Chemical Education, 82:5, May 2005, pp. 727-733.
Steinmann, P., et al., “Nanometer-Scale Gaps Between Metallic Electrodes Fabricated Using a Statistical Alighment Technique,”Applied Physics Letters, vol. 86, 2005, pp. 063104-1-063104-3.
Steinmann, P., et al., “Fabrication of Sub-5 nm Gaps Between Metallic Electrodes Using Conventional Lithographic Techniques,”J. Vac. Sci. Technol. B, 22:6, Nov./Dec. 2004, pp. 3178-3181.
Philipp, G., et al., “Shadow Evaporation Method for Fabrication of Sub 10 nm Gaps Between Metal Eletrodes,”Microelectronic Engineering, vol. 46, 1999, pp. 157-160.
Di Fabrizio, E., et al., “Fabrication of 5 nm Resolution Electrodes for Molecular Devices by Means of Electron Beam Lithography,”Jpn. J Appl. Phys., vol. 36, 1997, pp. L70-L72.
Huang, L. et al., “Fabrication of a Nano-Scale Gap by Selective Chemical Deposition,”Chem. Commun., 2002, pp. 72-73.
Gupta Rahul
Willis Brian G.
RatnerPrestia
Soward Ida M
University of Delaware
LandOfFree
Method of fabricating monolithic nanoscale probes does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating monolithic nanoscale probes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating monolithic nanoscale probes will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2697635