Method for producing semiconductor laser diode

Details Method for producing semiconductor laser diode Method for producing semiconductor laser diode

1996-07-09

1998-09-01

Niebling, John

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 93, 148DIG50, 148DIG51, 148DIG56, 148DIG72, H01L 21203

Patent

active

058010718

ABSTRACT:
A semiconductor laser diode apparatus has a substrate of a first conduction type, a first clad layer of the first conduction type which is formed on the substrate, a current block layer which is formed on the first clad layer, a V groove stripe which is formed in a vertical direction so that a tip of the V groove can arrive at the first clad layer in depth, an active layer which is formed on the first clad layer and the current block layer along the V groove stripe without a low resistance layer, a second clad layer of a second conduction type which is formed on the active layer, a contact layer of the second conduction type which is formed on the second clad layer, a first electrode which is formed on a surface of the substrate which is reverse side of a surface on which the first clad layer is formed and a second electrode which is formed oil a surface of the contact layer. Therefore a low threshold current level can be achieved.

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