Voltage excited piezoelectric resistance memory cell system

Details Voltage excited piezoelectric resistance memory cell system Voltage excited piezoelectric resistance memory cell system

2011-07-26

2011-07-26

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S005000, C257S295000, C257SE45002

Reexamination Certificate

active

07985960

ABSTRACT:
The present invention discloses a memory system comprising a plurality of crystals, and at least two conductors. The at least two conductors being orthogonal to each other. Wherein at least one of the plurality of crystals are bounded by the orthogonal intersection of the at least two conductors.

REFERENCES:
patent: 5596522 (1997-01-01), Ovshinsky et al.
patent: 6791859 (2004-09-01), Hush et al.
patent: 2005/0128840 (2005-06-01), Rinerson
patent: 2007/0069263 (2007-03-01), Mizuuchi et al.
patent: 2007/0153564 (2007-07-01), Mori et al.

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