Solid-state imaging device with specific contact arrangement

Details Solid-state imaging device with specific contact arrangement Solid-state imaging device with specific contact arrangement

2011-05-17

2011-05-17

Ye, Lin (Department: 2622)

Television

Camera, system and detail

Solid-state image sensor

C348S310000, C348S294000, C257S291000, C250S208100

Reexamination Certificate

active

07944493

ABSTRACT:
In each photosensitive cell, a photodiode101, a transfer gate102, a floating diffusion layer section103, an amplifier transistor104, and a reset transistor105are formed in one active region surrounded by a device isolation region. The floating diffusion layer section103included in one photosensitive cell is connected not to the amplifier transistor104included in that cell but to the gate of the amplifier transistor104included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire111connects the transfer gates102arranged in the same row, and a polysilicon wire112connects the reset transistors105arranged in the same row. For connection in the row direction, only polysilicon wires are used.

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