Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-05-31
2011-05-31
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S004000, C257SE45002
Reexamination Certificate
active
07952086
ABSTRACT:
Provided are a phase-change nonvolatile memory device and a manufacturing method thereof. The device includes: a substrate; and a stack structure disposed on the substrate and including a phase-change material layer. The phase-change material layer is formed of an alloy of antimony (Sb) and zinc (Zn), so that the phase-change memory device can stably operate at high speed and reduce power consumption.
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Choi Se Young
Park Tae Jin
Yoon Sung Min
Yu Byoung Gon
Budd Paul A
Electronics and Telecommunications Research Institute
Jackson, Jr. Jerome
Kile Park Goekjian Reed & McManus PLLC
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