Semiconductor device and manufacturing method therefor

Details Semiconductor device and manufacturing method therefor Semiconductor device and manufacturing method therefor

2011-03-08

2011-03-08

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S635000, C257S759000, C257S760000, C257SE21264, C438S584000, C438S623000, C438S780000

Reexamination Certificate

active

07902641

ABSTRACT:
The present invention relates to a semiconductor device. The semiconductor device includes a fluorocarbon film formed on a substrate and a film containing metal formed on the fluorocarbon film, wherein the content amount of fluorine atom on the fluorocarbon film, which contacts the film containing metal, is in a predetermined range.

REFERENCES:
patent: 6720659 (2004-04-01), Akahori
patent: 6846737 (2005-01-01), Towle et al.
patent: 7235490 (2007-06-01), Sato et al.
patent: 2006/0131754 (2006-06-01), Ohtake et al.
patent: 10-199976 (1998-07-01), None
patent: 10199976 (1998-07-01), None
Japan Patent Office, International Search Report and Written Opinion in related PCT Application No. PCT/JP2009/003314 , dated Oct. 13, 2009, 11 pages.

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