Pixel structure, display panel, photoelectric device and...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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C257S083000, C257S084000

Reexamination Certificate

active

07951628

ABSTRACT:
A pixel structure includes a substrate, a first and a second patterned conductive layers, and a pixel electrode. The first patterned conductive layer, disposed on the substrate, includes at least one scan line, at least one gate, and at least one common electrode line. The second patterned conductive layer, disposed on the first patterned conductive layer, includes at least one data line, at least one source/drain, and at least one first patterned layer partly disposed on the common electrode line. The pixel electrode, disposed on the second patterned conductive layer, includes at least one first part and one second part. The first part partly covers the first patterned layer and the common electrode line. The second part, connected to the source/drain, covers the other part of the first patterned layer. The first and second patterned layers compose at least one first capacitance.

REFERENCES:
patent: 5923390 (1999-07-01), Jung Mok et al.
patent: 6940579 (2005-09-01), Ozaki et al.
patent: 7675582 (2010-03-01), Luo et al.
patent: 2005/0117078 (2005-06-01), Lai et al.
patent: 2006/0119753 (2006-06-01), Luo et al.

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