Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-08-09
2011-08-09
Luu, Pho M (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030, C365S185180, C365S189090, C365S207000
Reexamination Certificate
active
07995394
ABSTRACT:
Program disturb is reduced in a non-volatile storage system during a program operation for a selected word line by initially using a pass voltage with a lower amplitude on word lines which are adjacent to the selected word line. This helps reduce charge trapping at floating gate edges, which can widen threshold voltage distributions with increasing program-erase cycles. When program pulses of higher amplitude are applied to the selected word line, the pass voltage switches to a higher level to provide a sufficient amount of channel boosting. The switch to a higher pass voltage can be triggered by a specified program pulse being applied or by tracking lower state storage elements until they reach a target verify level. The amplitude of the program voltage steps down when the pass voltage steps up, to cancel out capacitive coupling to the selected storage elements from the change in the pass voltage.
REFERENCES:
patent: 5642309 (1997-06-01), Kim
patent: 7212435 (2007-05-01), Rudeck
patent: 7426138 (2008-09-01), Wong
patent: 7440323 (2008-10-01), Lutze
patent: 7545680 (2009-06-01), Kim
patent: 2005/0030828 (2005-02-01), Tanaka
patent: 2005/0083735 (2005-04-01), Chen
patent: 2005/0122780 (2005-06-01), Chen et al.
patent: 2006/0126390 (2006-06-01), Gorobets et al.
patent: 2008/0008006 (2008-01-01), Goda
patent: 2008/0037327 (2008-02-01), Park
patent: 2008/0084752 (2008-04-01), Li
patent: 2008/0101126 (2008-05-01), Hemink
patent: 2008/0123426 (2008-05-01), Lutze
patent: 2008/0225595 (2008-09-01), Choi
patent: 2008/0259689 (2008-10-01), Roohparvar
patent: 2008/0283899 (2008-11-01), Hendriks
patent: 2008/0291730 (2008-11-01), Aritome
patent: 2009/0040831 (2009-02-01), Noh
patent: 2009/0141557 (2009-06-01), Fujiu
Dong Yingda
Ishigaki Toru
Oowada Ken
Bui Tha-o
Luu Pho M
SanDisk Technologies Inc.
Vierra Magen Marcus & DeNiro LLP
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