Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-05-03
2011-05-03
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S053000, C257S461000, C257SE31039
Reexamination Certificate
active
07935966
ABSTRACT:
A semiconductor device including, on at least one surface of a crystalline semiconductor substrate, at least one first amorphous semiconductor region doped with a first type of conductivity. The semiconductor substrate includes, on the same at least one surface, at least one second amorphous semiconductor region doped with a second type of conductivity, opposite the first type of conductivity. The first amorphous semiconductor region, insulated for the second amorphous semiconductor region by at least ore dielectric region in the contact with the semiconductor substrate, and the second amorphous semiconductor region form an interdigitated structure.
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Damon-Lacoste Jerome
Jaussaud Claude
Ribeyron Pierre Jean
Roca I. Cabarrocas Pere
Commissariat a l'Energie Atomique et Aux Energies Alternatives
Duong Khanh B
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Smith Zandra
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