Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2011-08-30
2011-08-30
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C257S415000, C257S416000, C257S417000, C257SE23180
Reexamination Certificate
active
08008735
ABSTRACT:
A semiconductor element of the electric circuit includes a semiconductor layer over a gate electrode. The semiconductor layer of the semiconductor element is formed of a layer including polycrystalline silicon which is obtained by crystallizing amorphous silicon by heat treatment or laser irradiation, over a substrate. The obtained layer including polycrystalline silicon is also used for a structure layer such as a movable electrode of a structure body. Therefore, the structure body and the electric circuit for controlling the structure body can be formed over one substrate. As a result, a micromachine can be miniaturized. Further, assembly and packaging are unnecessary, so that manufacturing cost can be reduced.
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Izumi Konami
Yamaguchi Mayumi
Fish & Richardson P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Vu Hung
Webb Vernon P
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