Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

2011-03-15

2011-03-15

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

Having specific type of active device

C257S207000, C257S369000, C257S371000, C257S374000, C257S392000, C257SE27067, C257SE27105

Reexamination Certificate

active

07906800

ABSTRACT:
A semiconductor integrated circuit has a first substrate of a first polarity to which a first substrate potential is given, a second substrate of the first polarity to which a second substrate potential different from the first substrate potential is given, and a third substrate of a second polarity different from the first polarity. The first substrate is insulated from a power source or ground to which a source of a MOSFET formed on the substrate is connected. The third substrate is disposed between the first and second substrates in adjacent relation to the first and second substrates. A circuit element is formed on the third substrate.

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Tadahiro Kuroda et al., “A High-Speed Low-Power 0.3μm CMOS Gate Array with Variable Threshold Voltage (VT) Scheme,” IEEE 1996 Custom Integrated Circuits Conference, p. 53-56.
Masaya Sumita et al., “Mixed Body-Bias Techniques with Fixed V, and IdsGeneration Circuits,” ISSCC 2004 / Session 8 / Circuits for Digital Systems / 8.5, 2004 IEEE International Solid-State Circuits Conference.

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