Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2011-01-04
2011-01-04
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S713000, C257SE33056, C257SE33057, C361S736000
Reexamination Certificate
active
07863640
ABSTRACT:
A circuit board for a light emitting diode package improved in heat radiation efficiency and a manufacturing method thereof. In a simple manufacturing process, insulating layers are formed by anodizing on a portion of a thermally conductive board body and plated with a conductive material. In the light emitting diode package, a board body is made of a thermally conductive metal. Insulating oxidation layers are formed at a pair of opposing edges of the board body. First conductive patterns are formed on the insulating oxidation layers, respectively. Also, second conductive patterns are formed in contact with the board body at a predetermined distance from the first conductive patterns, respectively. The light emitting diode package ensures heat generated from the light emitting diode to radiate faster and more effectively. Additionally, the insulating layers are formed integral with the board body by anodizing, thus enhancing productivity and durance.
REFERENCES:
patent: 5661341 (1997-08-01), Neftin
patent: 2006/0261364 (2006-11-01), Suehiro et al.
patent: 2007/0023893 (2007-02-01), Shin et al.
patent: 2007-43155 (2007-02-01), None
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Korean Office Action, with English Translation, issued in corresponding Korean Patent Application No. 10-2006-0018861, Dated on Apr. 30, 2007.
Japanese Office Action, with English translation, issued in Japanese Patent Application No. 2007-039445, dated Apr. 6, 2010.
Choi Seog Moon
Lee Young Ki
Shin Sang Hyun
McDermott Will & Emery LLP
Samsung Electro-Mechanics Co. Ltd.
Samsung LED Co., Ltd.
Vu Hung
Webb Vernon P
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