Method and system for measuring film stress in a wafer film

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

Reexamination Certificate

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Details

Type

Reexamination Certificate

Status

active

Patent number

08004303

Description

ABSTRACT:
In a MEMS wafer, film stresses are measured by placing an inductor array over or under the wafer and measuring inductance variations across the array to obtain a map defining the amount of bowing of the wafer.

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