Metal treatment – Compositions – Heat treating
Patent
1984-02-27
1985-11-26
Saba, William G.
Metal treatment
Compositions
Heat treating
29576B, 29576T, 118500, 118641, 118724, 118728, 148DIG3, 148DIG6, 148DIG71, 148DIG76, 219385, 219390, 432 11, 432 45, 432148, 432198, H01L 21324, H01L 21265
Patent
active
045552738
ABSTRACT:
A method for annealing semiconductor samples, especially following ion-implantation of semiconductor samples is disclosed. A furnace on a set of rails is passed over the semiconductor sample which is supported on a stationary wire basket made of low thermal mass, fine tungsten wire. The furnace temperature may be about 5.degree. above the desired anneal temperature of the semiconductor sample such that the sample temperature rises to within a few degrees of the furnace temperature within seconds. Utilizing the moveable furnace insures uniform heating without elaborate temperature control or expensive beam generating equipment.
The apparatus and process of the present invention are utilized for rapid annealing of ion-implanted indium phosphide semiconductors within 10 to 30 seconds and at temperatures of approximately 700.degree. C., thereby eliminating undesired and damaging movement of impurities within the ion-implanted InP.
REFERENCES:
patent: 2992903 (1961-07-01), Imber
patent: 3723053 (1973-03-01), Myers et al.
patent: 3734693 (1973-05-01), Petcoff
patent: 4347431 (1982-08-01), Pearce et al.
patent: 4357180 (1982-11-01), Molnar
Grochowski et al., "Slow Cooling to Minimize Distortion . . . " I.B.M. Te Discl. Bull., vol. 14, No. 5, Oct. 1971, p. 1640.
Edel et al., "Capsule Cooling Following Diffusion" I.B.M. Tech. Discl. Bull., vol. 15, No. 6, Nov. 1972, p. 1967.
Collins David A.
Lile Derek L.
Zeisse Carl R.
Beers R. F.
Fendelman Harvey
Johnston E. F.
Saba William G.
The United States of America as represented by the Secretary of
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