Non-volatile memory with power-saving multi-pass sensing

Details Non-volatile memory with power-saving multi-pass sensing Non-volatile memory with power-saving multi-pass sensing

2011-06-21

2011-06-21

Le, Vu A (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185250, C365S185220, C365S185030

Reexamination Certificate

active

07965560

ABSTRACT:
A non-volatile memory device capable of reading and writing a large number of memory cells with multiple read/write circuits in parallel has features to reduce power consumption during sensing, which is included in read, and program/verify operations. A sensing verify operation includes one or more sensing cycles relative to one or more demarcation threshold voltages to determine a memory state. In one aspect, coupling of the memory cells to their bit lines are delayed during a precharge operation in order to reduced the cells' currents working against the precharge. In another aspect, a power-consuming precharge period is minimized by preemptively starting the sensing in a multi-pass sensing operation. High current cells not detected as a result of the premature sensing will be detected in a subsequent pass.

REFERENCES:
patent: 4357685 (1982-11-01), Daniele et al.
patent: 4852064 (1989-07-01), Kim et al.
patent: 5070032 (1991-12-01), Yuan et al.
patent: 5095344 (1992-03-01), Harari
patent: 5172338 (1992-12-01), Mehrotra et al.
patent: 5313421 (1994-05-01), Guterman et al.
patent: 5315541 (1994-05-01), Harari et al.
patent: 5343063 (1994-08-01), Yuan et al.
patent: 5388078 (1995-02-01), Arakawa
patent: 5418752 (1995-05-01), Harari et al.
patent: 5570315 (1996-10-01), Tanaka et al.
patent: 5595924 (1997-01-01), Yuan et al.
patent: 5652719 (1997-07-01), Tanaka et al.
patent: 5661053 (1997-08-01), Yuan
patent: 5768192 (1998-06-01), Eitan
patent: 5774397 (1998-06-01), Endoh et al.
patent: 5903495 (1999-05-01), Takeuchi et al.
patent: 6011725 (2000-01-01), Eitan
patent: 6046935 (2000-04-01), Takeuchi et al.
patent: 6144600 (2000-11-01), Ogura
patent: 6222762 (2001-04-01), Guterman et al.
patent: 6297670 (2001-10-01), Chao et al.
patent: 6657891 (2003-12-01), Shibata et al.
patent: 6977842 (2005-12-01), Nazarian
patent: 7016230 (2006-03-01), Hosono
patent: 7170784 (2007-01-01), Cernea et al.
patent: 7173854 (2007-02-01), Cernea et al.
patent: 7177212 (2007-02-01), Dudeck et al.
patent: 7280401 (2007-10-01), Di Gregorio
patent: 7466592 (2008-12-01), Mitani et al.
patent: 2002/0186592 (2002-12-01), Pagliato et al.
patent: 2004/0057318 (2004-03-01), Cernea et al.
patent: 2004/0109357 (2004-06-01), Cernea et al.
patent: 2005/0057966 (2005-03-01), Nazarian
patent: 2005/0078524 (2005-04-01), Hosono
patent: 2005/0162951 (2005-07-01), Dudeck et al.
patent: 2005/0169082 (2005-08-01), Cernea et al.
patent: 2005/0237814 (2005-10-01), Li et al.
patent: 2006/0209592 (2006-09-01), Li et al.
patent: 2007/0279990 (2007-12-01), Choy
patent: 2008/0205163 (2008-08-01), Park et al.
patent: 56-143592 (1981-11-01), None
patent: WO 2004/029984 (2004-04-01), None
Eitan et al., “NROM: A Novel Localized Trapping, 2-Bit Nonvolatile Memory Cell,” IEEE Electron Device Letters, vol. 21, No. 11, Nov. 2000, pp. 543-545.
EPO/ISA, “Invitation to Pay Additional Fees,” mailed in related International Application No. PCT/US2006/062605 on Jul. 26, 2007, 9 pages.
EPO/ISA, “Notification of Transmittal of the International Search Report and the Written Opinion of the International Searching Authority, or the Declaration,” mailed in related International Application No. PCT/US2006/062605 on Sep. 20, 2007, 19 pages.
Taiwan Intellectual Property Office (IPO), “Search Report,” corresponding Taiwanese Patent Application No. 095149909, mailed on Jan. 15, 2009, 3 pages (including translation.).
USPTO, “Office Action,” mailed in related U.S. Appl. No. 11/322,427 on Jun. 27, 2007, 10 pages.
USPTO, “Office Action,” mailed in related U.S. Appl. No. 11/322,427 on Feb. 13, 2008, 19 pages.

Affiliated with

Also associated with

Rating

Non-volatile memory with power-saving multi-pass sensing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory with power-saving multi-pass sensing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory with power-saving multi-pass sensing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2681785