Phototransistor with source layer between barrier layer and...

Radiant energy – Photocells; circuits and apparatus – Housings

Reexamination Certificate

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C250S2140RC

Reexamination Certificate

active

07982178

ABSTRACT:
A photo transistor has an active region spaced from a source by barrier. A drain is laterally spaced from the active region. Light incident on the active region creates electron-hole pairs. Holes accumulate at the barrier and modulate the effective barrier height to electrons. A gate reset voltage then is applied to gate which lower the barrier allowing the holes to escape.

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patent: 2003/0133338 (2003-07-01), Kanda et al.
Gadelrab et al., “The Source-Gated Amorphous Silicon Photo-Transistor,” IEEE Transactions on Electron Devices 44(10):1789-1794, Oct. 1997.
Shannon et al., “Source-Gated Thin-Film Transistors,” IEEE Electron Device Letters 24(6):405-407, Jun. 2003.

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