Radiant energy – Photocells; circuits and apparatus – Housings
Reexamination Certificate
2011-07-19
2011-07-19
Le, Que T (Department: 2878)
Radiant energy
Photocells; circuits and apparatus
Housings
C250S2140RC
Reexamination Certificate
active
07982178
ABSTRACT:
A photo transistor has an active region spaced from a source by barrier. A drain is laterally spaced from the active region. Light incident on the active region creates electron-hole pairs. Holes accumulate at the barrier and modulate the effective barrier height to electrons. A gate reset voltage then is applied to gate which lower the barrier allowing the holes to escape.
REFERENCES:
patent: 4665325 (1987-05-01), Yamada et al.
patent: 5019876 (1991-05-01), Nishizawa
patent: 5780898 (1998-07-01), Tamaki et al.
patent: 7132713 (2006-11-01), Nakazato et al.
patent: 2001/0031519 (2001-10-01), Ayres et al.
patent: 2001/0052597 (2001-12-01), Young et al.
patent: 2003/0133338 (2003-07-01), Kanda et al.
Gadelrab et al., “The Source-Gated Amorphous Silicon Photo-Transistor,” IEEE Transactions on Electron Devices 44(10):1789-1794, Oct. 1997.
Shannon et al., “Source-Gated Thin-Film Transistors,” IEEE Electron Device Letters 24(6):405-407, Jun. 2003.
Brotherton Stanley D.
Shannon John M.
Iannucci Robert
Le Que T
Seed IP Law Group PLLC
ST-Ericsson SA
LandOfFree
Phototransistor with source layer between barrier layer and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Phototransistor with source layer between barrier layer and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phototransistor with source layer between barrier layer and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2681274