Method of producing silicon monocrystal

Details Method of producing silicon monocrystal Method of producing silicon monocrystal

1998-12-23

2000-12-19

Utech, Benjamin L.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 35, C30B 1536

Patent

active

061622923

ABSTRACT:
There is disclosed a method of producing a silicon monocrystal using a Czochralski method in which a sharp tip end of a seed crystal is brought into contact with silicon melt and is melted, and the seed crystal is then pulled, without performance of a necking operation, in order to grow a silicon monocrystalline ingot below the seed crystal. The operation of melting the seed crystal into the silicon melt is performed in a state in which a temperature in the vicinity of the surface of the silicon melt is set in a range between a temperature 25.degree. C. higher than the melting point of silicon and a temperature 45.degree. C. higher than the melting point of silicon. The operation of growing the monocrystal is started within 0 to 10 minutes after completion of the operation of melting the sharp tip end of the seed crystal into the silicon melt. The monocrystal is grown at a rate in a range of 0.3 to 0.7 mm/min when growth of the monocrystal is started after completion of the melting operation. The method can grow the silicon monocrystal ingot with a high success rate in making the silicon monocrystal ingot dislocation free, and can improve productivity of silicon monocrystal ingots.

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Wolf et al., Silicon Processing for the VLSI Era vol. 1: Process Technology, Lattice Press, Sunset Beach, Calif., USA, p. 18, 1986.

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