Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2011-04-05
2011-04-05
Smith, Matthew S (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S022000, C257SE33001
Reexamination Certificate
active
07919340
ABSTRACT:
In the present invention, a first substrate which is an evaporation donor substrate is prepared in which a material layer is formed over a patterned reflective layer. A surface of the material layer over the first substrate is irradiated with first light which satisfies one predetermined irradiation condition to pattern the material layer. A surface opposite to the surface of the first substrate is irradiated with second light which satisfies another predetermined irradiation condition to evaporate the patterned material layer onto a second substrate, which is a deposition target substrate. According to the present invention, deterioration of a material included in the material layer can be prevented and a film pattern can be formed on the second substrate with high accuracy.
REFERENCES:
patent: 4772582 (1988-09-01), DeBoer
patent: 5742129 (1998-04-01), Nagayama et al.
patent: 5851709 (1998-12-01), Grande et al.
patent: 5937272 (1999-08-01), Tang
patent: 6165543 (2000-12-01), Otsuki et al.
patent: 6682863 (2004-01-01), Rivers et al.
patent: 2006/0040200 (2006-02-01), Song et al.
patent: 2006/0084006 (2006-04-01), Kang et al.
patent: 2006/0246240 (2006-11-01), Matsuda et al.
patent: 2007/0057264 (2007-03-01), Matsuda
patent: 2008/0124647 (2008-05-01), Matsuda et al.
patent: 2008/0299496 (2008-12-01), Hirakata et al.
patent: 0 851 714 (1998-07-01), None
patent: 1 176 642 (2002-01-01), None
patent: 10-208881 (1998-08-01), None
patent: 2000-77182 (2000-03-01), None
patent: 2002-110350 (2002-04-01), None
patent: 2006-309995 (2006-11-01), None
Ibe Takahiro
Ikeda Hisao
Fan Michele
Husch & Blackwell LLP
Semiconductor Energy Laboratory Co,. Ltd.
Smith Matthew S
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