Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-05-24
2011-05-24
Nguyen, Khiem D (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE51005, C349S139000, C349S143000, C345S092000
Reexamination Certificate
active
07947983
ABSTRACT:
A thin film transistor matrix device including an insulating substrate, a plurality of thin film transistors (TFTs) on the insulating substrate, and a plurality of picture element electrodes on the insulating substrate in a matrix to define an image display region. A first conducting film is on the insulating substrate. A first insulating film is on the first conducting film. A second conducting film is on the first insulating film, and a second insulating film is over the first insulating film and the second conducting film. A first conducting connection is formed, outside the image display region, to pass through the first and second insulating films, and to electrically connect the first conducting film to a third conducting film. A second conducting connection is formed, outside the image display region, to pass through the second insulating film and to electrically connect the second conducting film to the third conducting film.
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Hayashi Shougo
Kinjo Takeshi
Okamoto Kenji
Tachibanaki Makoto
Takizawa Hidaki
Greer Burns & Crain Ltd.
Nguyen Khiem D
Sharp Kabushiki Kaisha
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