Monolithic semiconductor laser

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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Reexamination Certificate

active

07965753

ABSTRACT:
An infrared element (10a) which includes at least a light emitting layer forming portion (9a) composed of, for example, a first conductivity type cladding layer (2a), an active layer (3a), and a second conductivity type cladding layer (4a) for emitting infrared light, is formed on a semiconductor substrate (1), and a red element (10b) which includes at least a light emitting layer forming portion (9b) composed of, for example, a first conductivity type cladding layer (2b), an active layer (3b), and a second conductivity type cladding layer (4b) for emitting red light, is formed on the same semiconductor substrate (1). And their second conductivity type cladding layers (4aand4b) are made of the same material. As a result, forming process of their ridge portions may be communized and both of the elements can be formed respectively, with a window structure capable of high output operation.

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patent: 2002197707 (2002-07-01), None

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