Elevated pocket pixels, imaging devices and systems...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S461000, C257S432000, C257SE33067, C257S291000, C257S292000, C257S294000, C257SE27134, C257SE27122, C438S071000

Reexamination Certificate

active

07952158

ABSTRACT:
An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.

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R.N. Nixon, et al., “256 × 256 CMOS Active Pixel Sensor Camera-on-a-Chip,” IEEE Journal of Solid-State Circuits, vol. 31, No. 12, pp. 2046-2050, Dec. 1996.
S. Mendis, et al., “CMOS Active Pixel Image Sensor,” IEEE Transactions on Electron Devices, vol. 41, No. 3, pp. 452-453, Mar. 1994.

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