Method for manufacturing SOI substrate using the heat...

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

Reexamination Certificate

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Details

C438S457000, C257SE21568, C257SE21570

Reexamination Certificate

active

07977206

ABSTRACT:
A heat treatment apparatus is disclosed, which enables suppression of a warp of a base substrate to which a plurality of single crystal semiconductor substrates are bonded. An example of the apparatus comprises a treatment chamber, a supporting base provided in the treatment chamber, a plurality of supports which are provided over the supporting base and are arranged to support the base substrate, and a heating unit for heating the base substrate, where each position of the plurality of supports can be changed over the supporting base. The use of this apparatus contributes to the reduction in the region where the base substrate and the supports are in contact with each other, which allows uniform heating of the base substrate, leading to the formation of an SOI substrate with high quality.

REFERENCES:
patent: 6818529 (2004-11-01), Bachrach et al.
patent: 6846718 (2005-01-01), Aga et al.
patent: 6884694 (2005-04-01), Park et al.
patent: 7176102 (2007-02-01), Aga et al.
patent: 2003/0207545 (2003-11-01), Yasukawa
patent: 2004/0266222 (2004-12-01), Sata
patent: 2007/0117354 (2007-05-01), Gadkaree et al.
patent: 09-260618 (1997-10-01), None
patent: 11-163363 (1999-06-01), None
patent: 03-077831 (2003-03-01), None
patent: 2005-203714 (2005-07-01), None
patent: 2005-539259 (2005-12-01), None
patent: 2006-019625 (2006-01-01), None
patent: WO 01/28000 (2001-04-01), None

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