Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2011-07-12
2011-07-12
Nguyen, Khiem D (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S457000, C257SE21568, C257SE21570
Reexamination Certificate
active
07977206
ABSTRACT:
A heat treatment apparatus is disclosed, which enables suppression of a warp of a base substrate to which a plurality of single crystal semiconductor substrates are bonded. An example of the apparatus comprises a treatment chamber, a supporting base provided in the treatment chamber, a plurality of supports which are provided over the supporting base and are arranged to support the base substrate, and a heating unit for heating the base substrate, where each position of the plurality of supports can be changed over the supporting base. The use of this apparatus contributes to the reduction in the region where the base substrate and the supports are in contact with each other, which allows uniform heating of the base substrate, leading to the formation of an SOI substrate with high quality.
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Nguyen Khiem D
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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