Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide
Reexamination Certificate
2011-05-10
2011-05-10
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Semiconductor is an oxide of a metal or copper sulfide
C257S072000, C257SE29292, C257SE27060, C257SE21020, C438S159000, C438S161000, C438S163000, C438S401000, C438S669000
Reexamination Certificate
active
07939822
ABSTRACT:
The present invention provides a manufacturing process using a droplet-discharging method that is suitable for manufacturing a large substrate in mass production. A photosensitive material solution of a conductive film is selectively discharged by a droplet-discharging method, selectively exposed to laser light, and developed or etched, thereby allowing only the region exposed to laser light to be left and realizing a source wiring and a drain wiring having a more microscopic pattern than the pattern itself formed by discharging. One feature of the source wiring and the drain wiring is that the source wiring and the drain wiring cross an island-like semiconductor layer and overlap it.
REFERENCES:
patent: 5580473 (1996-12-01), Shinohara et al.
patent: 5731613 (1998-03-01), Yamazaki et al.
patent: 6294274 (2001-09-01), Kawazoe et al.
patent: 6416583 (2002-07-01), Kitano et al.
patent: 6532045 (2003-03-01), Chung et al.
patent: 6627263 (2003-09-01), Kitano et al.
patent: 6674136 (2004-01-01), Ohtani
patent: 6809952 (2004-10-01), Masui
patent: 6852998 (2005-02-01), Sung et al.
patent: 7009204 (2006-03-01), Tsai et al.
patent: 7049190 (2006-05-01), Takeda et al.
patent: 7061014 (2006-06-01), Hosono et al.
patent: 7105868 (2006-09-01), Nause et al.
patent: 7297977 (2007-11-01), Hoffman et al.
patent: 7323356 (2008-01-01), Hosono et al.
patent: 7371625 (2008-05-01), Yamazaki et al.
patent: 7402506 (2008-07-01), Levy et al.
patent: 7411209 (2008-08-01), Endo et al.
patent: 7453065 (2008-11-01), Saito et al.
patent: 7453087 (2008-11-01), Iwasaki
patent: 7468304 (2008-12-01), Kaji et al.
patent: 2002/0012868 (2002-01-01), Furuse et al.
patent: 2002/0136829 (2002-09-01), Kitano et al.
patent: 2003/0032210 (2003-02-01), Takayama et al.
patent: 2005/0023579 (2005-02-01), Yamazaki
patent: 2005/0095356 (2005-05-01), Nakamura et al.
patent: 2005/0122351 (2005-06-01), Yamazaki et al.
patent: 2005/0146551 (2005-07-01), Yamazaki et al.
patent: 2005/0199878 (2005-09-01), Arao et al.
patent: 2005/0199959 (2005-09-01), Chiang et al.
patent: 2005/0275038 (2005-12-01), Shih et al.
patent: 2005/0276912 (2005-12-01), Yamamoto et al.
patent: 2006/0108636 (2006-05-01), Sano et al.
patent: 2006/0110867 (2006-05-01), Yabuta et al.
patent: 2006/0113536 (2006-06-01), Kumomi et al.
patent: 2006/0113539 (2006-06-01), Sano et al.
patent: 2006/0113549 (2006-06-01), Den et al.
patent: 2006/0113565 (2006-06-01), Abe et al.
patent: 2006/0163743 (2006-07-01), Kuwabara et al.
patent: 2006/0170067 (2006-08-01), Maekawa et al.
patent: 2006/0208977 (2006-09-01), Kimura
patent: 2006/0231882 (2006-10-01), Kim et al.
patent: 2006/0238135 (2006-10-01), Kimura
patent: 2006/0284171 (2006-12-01), Levy et al.
patent: 2006/0284172 (2006-12-01), Ishii
patent: 2006/0292777 (2006-12-01), Dunbar
patent: 2007/0024187 (2007-02-01), Shin et al.
patent: 2007/0046191 (2007-03-01), Saito
patent: 2007/0052025 (2007-03-01), Yabuta
patent: 2007/0072439 (2007-03-01), Akimoto et al.
patent: 2007/0090365 (2007-04-01), Hayashi et al.
patent: 2007/0093002 (2007-04-01), Maekawa et al.
patent: 2007/0108446 (2007-05-01), Akimoto
patent: 2007/0158652 (2007-07-01), Lee et al.
patent: 2007/0172591 (2007-07-01), Seo et al.
patent: 2007/0187678 (2007-08-01), Hirao et al.
patent: 2007/0187760 (2007-08-01), Furuta et al.
patent: 2007/0194379 (2007-08-01), Hosono et al.
patent: 2007/0252928 (2007-11-01), Ito et al.
patent: 2007/0272922 (2007-11-01), Kim et al.
patent: 2007/0287296 (2007-12-01), Chang
patent: 2008/0012801 (2008-01-01), Kimura et al.
patent: 2008/0038882 (2008-02-01), Takechi et al.
patent: 2008/0038929 (2008-02-01), Chang
patent: 2008/0050595 (2008-02-01), Nakagawara et al.
patent: 2008/0073653 (2008-03-01), Iwasaki
patent: 2008/0083950 (2008-04-01), Pan et al.
patent: 2008/0106191 (2008-05-01), Kawase
patent: 2008/0128689 (2008-06-01), Lee et al.
patent: 2008/0129195 (2008-06-01), Ishizaki et al.
patent: 2008/0166834 (2008-07-01), Kim et al.
patent: 2008/0182358 (2008-07-01), Cowdery-Corvan et al.
patent: 2008/0224133 (2008-09-01), Park et al.
patent: 2008/0258139 (2008-10-01), Ito et al.
patent: 2008/0258140 (2008-10-01), Lee et al.
patent: 2008/0258141 (2008-10-01), Park et al.
patent: 2008/0258143 (2008-10-01), Kim et al.
patent: 2008/0308796 (2008-12-01), Akimoto et al.
patent: 2008/0308797 (2008-12-01), Akimoto et al.
patent: 2008/0308804 (2008-12-01), Akimoto et al.
patent: 2008/0308805 (2008-12-01), Akimoto et al.
patent: 2008/0308806 (2008-12-01), Akimoto et al.
patent: 2009/0008639 (2009-01-01), Akimoto et al.
patent: 2009/0114910 (2009-05-01), Chang
patent: 1445821 (2003-10-01), None
patent: 1 033 755 (2000-09-01), None
patent: 60-170972 (1985-09-01), None
patent: 06-088972 (1994-03-01), None
patent: 2000-188251 (2000-07-01), None
patent: 2003-174153 (2003-06-01), None
patent: 2003-296681 (2003-10-01), None
patent: 2000-0076747 (2000-12-01), None
patent: 2001-0060808 (2001-07-01), None
patent: WO 2005/071478 (2005-08-01), None
Kenji Nomura et al., “Thin Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor”, Science, May 23, 2003, vol. 300, pp. 1269-1272.
Kenji Nomura et al., “Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors”, Nature, Nov. 25, 2004, vol. 432, pp. 488-492.
Satoshi Masuda et al., “Transparent Thin Film Transistors Using ZnO as an Active Channel Layer and their Electrical Properties”, Journal of Applied Physics, Feb. 1, 2003, vol. 93 No. 3, pp. 1624-1630.
Korea Office Action (Application No. 2008-0122616) dated Aug. 14, 2009 with English Translation.
Korea Office Action (Application No. 2008-0122617) dated Aug. 14, 2009 with English Translation.
Office Action (U.S. Application No. 11/332,351) dated Sep. 4, 2009.
Korean Office Action (Application No. 2010-0018583;KR08516D3) dated Sep. 29, 2010.
Kuwabara Hideaki
Maekawa Shinji
Costellia Jeffrey L.
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
Smith Bradley K
Valentine Jami M
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