Static information storage and retrieval – Floating gate
Reexamination Certificate
2011-08-02
2011-08-02
Luu, Pho M (Department: 2824)
Static information storage and retrieval
Floating gate
C365S063000, C365S148000, C365S158000, C365S230030
Reexamination Certificate
active
07990762
ABSTRACT:
Circuits to control access to memory; for example, third dimension memory are provided. An integrated circuit (IC) may be configured to control access to memory cells. For example, the IC may include a memory having memory cells that are vertically disposed in multiple layers of memory. The IC may include a memory access circuit configured to control access to a first subset of the memory cells in response to access control data in a second subset of the memory cells. Each memory cell may include a non-volatile two-terminal memory element that stores data as a plurality of conductivity profiles that can be non-destructively sensed by applying a read voltage across the two terminals of the memory element. New data can be written by applying a write voltage across the two terminals of the memory element. The two-terminal memory elements can be arranged in a two-terminal cross-point array configuration.
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Bui Tha-O
Luu Pho M
Unity Semiconductor Corporation
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