Semiconductor memory device for storing multivalued data

Static information storage and retrieval – Floating gate – Multiple values

Reexamination Certificate

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C365S105000, C365S185170, C365S185220, C365S185240, C365S185180

Reexamination Certificate

active

07978514

ABSTRACT:
Data storage circuits are connected to the bit lines in a one-to-one correspondence. A write circuit writes the data on a first page into a plurality of first memory cells selected simultaneously by a word line. Thereafter, the write circuit writes the data on a second page into the plurality of first memory cell. Then, the write circuit writes the data on the first and second pages into second memory cells adjoining the first memory cells in the bit line direction.

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