Method of forming a small contact in phase-change memory

Details Method of forming a small contact in phase-change memory Method of forming a small contact in phase-change memory

2011-03-08

2011-03-08

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C257S004000, C257SE21068, C257SE45001

Reexamination Certificate

active

07901979

ABSTRACT:
A method of fabricating a phase-change memory cell is described. The cross-sectional area of a contact with a phase-change memory element within the cell is controlled by a width and an exposed length of a bottom electrode. The method allows the formation of very small phase-change memory cells.

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English Abstract of CN1449021.

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