Calibrated S-parameter measurements of a high impedance probe

Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Calibration

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C702S085000

Reexamination Certificate

active

07994801

ABSTRACT:
A new methodology for the measurement of the S-parameters of a high impedance probe allows obtaining a full two port S-parameter set for the high impedance probe. The measured probe S-parameters are then used for characterization of probes. An alternative method characterizes half of the fixture and termination as a one-port network and expanding it into a two-port error box. The two-port error box is then cascaded with the probe input.

REFERENCES:
patent: 5047725 (1991-09-01), Strid et al.
patent: 5854559 (1998-12-01), Miranda et al.
patent: 6423981 (2002-07-01), Nayler
patent: 6480013 (2002-11-01), Nayler et al.
patent: 7019535 (2006-03-01), Adamian
patent: 7034548 (2006-04-01), Anderson
patent: 7124049 (2006-10-01), Wong et al.
patent: 7375534 (2008-05-01), Kamitani
patent: 7405576 (2008-07-01), Kamitani
patent: 7439748 (2008-10-01), Kamitani
patent: 7532014 (2009-05-01), Chladek et al.
patent: 7865319 (2011-01-01), Jacobs et al.
patent: 2006/0181286 (2006-08-01), Adamian
patent: 2007/0041512 (2007-02-01), Pickerd et al.
patent: 2008/0036469 (2008-02-01), Chladek et al.
patent: W02008021907 (2008-02-01), None
D. Williams et al., “LMR Probe-Tip Calibrations uasing Nonideal Standards”, 1995, IEEE Trans. Microwave Theory and Tech. 43, pp. 466-469.
“Wideband Frequency-Domain Characterization of High-Impedance Probes,” (U. Arz, H.C. Reader, P. Kabos, and D.F. Williams), 58th ARFTG Conference Digest, pp. 117-124, Nov. 29-30, 2001.
“Calibrated waveform measurement with high-impedance probes,” (P. Kabos, H.C. Reader, U. Arz, and D.F. Williams), IEEE Trans. Microwave Theory and Tech., vol. 51, No. 2, pp. 530-535, Feb. 2003.
[0007] “Measuring the invasiveness of high-impedance probes,” (U. Arz, P. Kabos, and D.F. Williams), 7th IEEE Workshop on Signal Propagation on Interconnects, Siena, Italy, May 11-14, 2003.
“Calibrating On-Wafer Probes to the Probe Tips,” (D. F. Williams and R. B. Marks), 40th ARFTG Conference Digest, pp. 136-143, Dec. 1992.
[0010] “Multiport investigation of the coupling of high-impedance probes” (P. Kabos, U. Arz, and D.F. Williams), IEEE Microwave and Wireless Components Letters, vol. 14, No. 11, pp. 510-512, Nov. 2004.
[0011] “LRM Probe-Tip Calibrations with Imperfect Resistors and Lossy Lines,” (D.F. Williams and R.B. Marks), 42nd ARFTG Conference Digest, pp. 32-36, Dec. 1993.
“LRM Probe-Tip Calibrations using Nonideal Standards” (Dylan F. Williams, Senior Member, IEEE and Roger B. Marks, Senior Member, IEEE), 1995.
“Characterization and Modeling of SOI RF integrated components”, Morin Dehan, 2003 Thesis. Universite Catholique de Louvain, Introduction and Chapter 2.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Calibrated S-parameter measurements of a high impedance probe does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Calibrated S-parameter measurements of a high impedance probe, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Calibrated S-parameter measurements of a high impedance probe will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2670825

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.