Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With semiconductor element forming part
Reexamination Certificate
2011-07-05
2011-07-05
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With semiconductor element forming part
C257S700000, C257S690000, C257S691000, C257S698000, C257SE23019
Reexamination Certificate
active
07973398
ABSTRACT:
An embedded chip package structure is proposed. The embedded chip package structure includes a supporting board with a protruding section, a semiconductor chip formed on the protruding section of the supporting board, a dielectric layer formed on the supporting board and the semiconductor chip, and a circuit layer formed on the dielectric layer. The circuit layer is electrically connected to electrode pads of the semiconductor chip via a plurality of conducting structures formed inside the dielectric layer such that the semiconductor chip can be electrically connected to an external element through the circuit layer. By varying the thicknesses of the protruding section, the dielectric layer and the supporting board, warpage of the package structure resulted from temperature change during the fabrication process can be prevented.
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patent: 2003/0134455 (2003-07-01), Cheng et al.
patent: 2004/0001324 (2004-01-01), Ho et al.
patent: 2006/0001152 (2006-01-01), Hu
patent: 2006/0091530 (2006-05-01), Wang
Birch & Stewart Kolasch & Birch, LLP
Montalvo Eva Yan
Pizarro Marcos D.
Unimicron Technology Corp.
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