Antifuse structure having an integrated heating element

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C438S598000, C438S599000, C438S600000, C438S601000, C438S131000, C438S132000, C438S467000, C438S215000, C438S281000, C438S333000, C257S529000, C257S531000, C257S050000, C257S928000, C257S209000, C257S702000, C257SE23147, C257SE29111, C257SE23148

Reexamination Certificate

active

07982285

ABSTRACT:
The present invention provides antifuse structures having an integrated heating element and methods of programming the same, the antifuse structures comprising first and second conductors and a dielectric layer formed between the conductors, where one or both of the conductors functions as both a conventional antifuse conductor and as a heating element for directly heating the antifuse dielectric layer during programming.

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