Focused ion beam processing system and method

Details Focused ion beam processing system and method Focused ion beam processing system and method

2011-05-03

2011-05-03

Johnston, Phillip A (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S307000, C250S309000

Reexamination Certificate

active

07935943

ABSTRACT:
A focused ion beam (FIB) processing system includes a FIB irradiation unit that irradiates a FIB onto a pattern formed in a wafer, to form a section of the pattern, an imaging unit that images the section of the pattern, a calculation unit that calculates a pattern size based on the image of the section, a judgment unit that judges whether or not a differential of the pattern size with respect to time is equal to or below a threshold; and a control unit that stops the FIB irradiation unit if the judgment unit judges that the differential of the pattern size is equal to or below the threshold.

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patent: 6031229 (2000-02-01), Keckley et al.
patent: 7348556 (2008-03-01), Chitturi et al.
patent: 2004-361140 (2004-12-01), None

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