MOSFET and method for manufacturing MOSFET

Details MOSFET and method for manufacturing MOSFET MOSFET and method for manufacturing MOSFET

2011-04-19

2011-04-19

Pham, Hoai V (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257S135000, C257SE29265, C257SE21421, C438S137000

Reexamination Certificate

active

07928469

ABSTRACT:
The present invention provides a MOSFET and so forth that offer high breakdown voltage and low on-state loss (high channel mobility and low gate threshold voltage) and that can easily achieve normally OFF. A drift layer2of a MOSFET made of silicon carbide according to the present invention has a first region2aand a second region2b. The first region2ais a region from the surface to a first given depth. The second region2bis formed in a region deeper than the first given depth. The impurity concentration of the first region2ais lower than the impurity concentration of the second region2b.

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