ESD protection structures for semiconductor components

Details ESD protection structures for semiconductor components ESD protection structures for semiconductor components

2011-05-17

2011-05-17

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

With metal contact alloyed to elemental semiconductor type...

In pn junction tunnel diode

C257S104000, C257S109000, C257SE27073, C257SE29327

Reexamination Certificate

active

07943928

ABSTRACT:
An ESD protection structure includes a structure to be protected disposed in a semiconductor body. A region of a first conductivity type is disposed within the semiconductor body and a channel is disposed in the semiconductor body and extends through the region of the first conductivity type. A semiconductor of a second conductivity type is disposed within the channel adjacent the region of the first conductivity type such that the region of the first conductivity type and the semiconductor of the second conductivity type form a diode. At least one of the region of the first conductivity type and the semiconductor of the second conductivity type is electrically coupled to the structure to be protected.

REFERENCES:
patent: 6184545 (2001-02-01), Werner et al.
patent: 6710418 (2004-03-01), Sapp
patent: 6975013 (2005-12-01), Fujihira et al.
patent: 7098509 (2006-08-01), Zdebel et al.
patent: 2002/0070380 (2002-06-01), Andoh
patent: 2002/0158723 (2002-10-01), Miller
patent: 2005/0006706 (2005-01-01), Stefanov et al.
patent: 2005/0051814 (2005-03-01), Miyake et al.
patent: 0 905 781 (1999-03-01), None
patent: WO 95/22842 (1995-08-01), None

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