Semiconductor device, and power source and processor...

Miscellaneous active electrical nonlinear devices – circuits – and – External effect – Temperature

Reexamination Certificate

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Details

C327S513000

Reexamination Certificate

active

07965128

ABSTRACT:
A semiconductor device includes: a transistor having a first electrode coupled to a first power source node to which a first power source voltage is supplied, and a second electrode, and supplying a reference current to a temperature detection element; a diffused resistor including a first semiconductor region having a potential-fixing node coupled to the first power source node, and a second semiconductor region having a first resistor node coupled to the second electrode of the transistor and a second resistor node coupled to a second power source node to which a second power source voltage is supplied, and formed at a surface of the first semiconductor region; and a leakage current correction circuit for allowing a current having approximately the same magnitude and the same direction as a magnitude and a direction of a current flowing via the potential-fixing node and the second resistor node, to flow not via the diffused resistor but via the transistor.

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patent: 6225851 (2001-05-01), Descombes
patent: 6687107 (2004-02-01), Yamamoto et al.
patent: 6851849 (2005-02-01), Kimura
patent: 7592854 (2009-09-01), Watanabe
patent: 2002/0186067 (2002-12-01), Yamamoto et al.
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patent: 2001-264176 (2001-09-01), None
patent: 2002-368110 (2002-12-01), None
patent: 2006-047039 (2006-02-01), None

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