Method of making semicrystalline silicon article

Details Method of making semicrystalline silicon article Method of making semicrystalline silicon article

1979-07-19

1980-10-28

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148187, 148 15, 136243, H01L 21223

Patent

active

042305080

ABSTRACT:
A semicrystalline silicon solar energy cell formed from individual grains of silicon having portions thereof at the light-receiving surface of the cell. An electrical junction is formed at said light-receiving surface and extends across and below that surface and into and between the boundaries of adjoining grains to an extent such that the total junction area substantially exceeds the product of the linear dimensions of the wafer surface but does not extend completely around the boundaries of the silicon grains or to the opposed surface of the wafer.

REFERENCES:
patent: 3900943 (1975-08-01), Sirtl et al.
patent: 3990097 (1976-11-01), Lindmayer
patent: 4028151 (1977-06-01), Lindmayer
patent: 4082889 (1978-04-01), DiStefano
patent: 4113531 (1978-09-01), Zanio et al.
patent: 4155785 (1979-05-01), Cuomo et al.
patent: 4162177 (1979-07-01), Lindmayer

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