Native green laser semiconductor devices

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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C372S044011

Reexamination Certificate

active

07965752

ABSTRACT:
A semiconductor laser device operable to emit light having a desired wavelength in the green spectral range. The semiconductor laser device may include a pumping source and a laser structure including a substrate, a first cladding layer, and one or more active region layers. The one or more active region layers include a number of quantum wells having a spontaneous emission peak wavelength that is greater than about 520 nm at a reference pumping power density. The pumping source is configured to pump each quantum well at a pumping power density such that a stimulated emission peak of each quantum well is within the green spectral range, and the number of quantum wells within the one or more active region layers is such that a net optical gain of the quantum wells is greater than a net optical loss coefficient at the desired wavelength in the green spectral range.

REFERENCES:
patent: 5889805 (1999-03-01), Botez et al.
patent: 7058105 (2006-06-01), Lee et al.
patent: 7408199 (2008-08-01), Matsuyama et al.
patent: 7724795 (2010-05-01), Son et al.
patent: 2005/0056853 (2005-03-01), Kimura
patent: 2005/0232327 (2005-10-01), Nomura et al.
patent: 2008/0192788 (2008-08-01), Matsuyama et al.
patent: 2008/100505 (2008-08-01), None
patent: 2009/021206 (2009-02-01), None
patent: 2010/077810 (2010-07-01), None
“Compact green laser converter with injection pumping, based on MBE grown II-VI nanostructures”; Ivanov et al; Journal of Crystal Growth 311 (2009) 2120-2122.
“Recent achievements of AlInGaN based laser diodes in blue and green wavelength”; Jang et al; Invited Paper; Photonics PRJ. Team, Samsung Advanced Institute of Technology, PO Box 111, Suwon 440-600, South Korea.
“Effect of barrier thickness on the interface and optical properties of InGaN/GaN multiple quantum wells”; Kim et al; Journal of Applied Physics, vol. 40 (2001) pp. 3085-3088.
“Optical characteristics of III nitride quantum wells with different crystallographic orientations”; Kisin et al; Journal of Applied Physics 105, 013112 (2009).
“Stimulated emission at 474 nm from an InGaN laser diode structure grown on a (1122) GaN substrate”; Kojima et al; Applied Physics Letters 91, 251107 (2007).
“Gain suppression phenomena observed in InxGa1−xN quantum well laser diodes emitting at 470 nm”; Kojima et al; Applied Physics Letters 89, 241127 (2006).
“Behaviors of emission wavelength shift in AlInGaN-based green laser diodes”; Lee et al; IEEE Electronic Device Letters, vol. 29, No. 9, Aug. 2008; pp. 870-872.
“Barrier width dependence of group-III nitrides quantum-well transition energies”; Leroux et al; Physical Review B; vol. 60 No. 3; Jul. 15, 1999.
“Optically pumped InGaN/GaN MQW lift-off lasers grown on silicon substrates”; Lutsenko et al; Science Direct; Superlattices and Microstructures 41 (2007) 400-406.
“510-515 nm InGaN-based green laser diodes on c-Plane GaN substrate”; Miyoshi et al; Applied Physics Express 2 (2009) 062201.
“Wavelength dependence of InGaN laser diode characteristics”; Nagahama et al; Journal of Applied Physics, vol. 40 (2001) pp. 3075-3081.
“Characteristics of InGaN multi-quantum-well-structure laser diodes”; Nakamura et al; 1996 American Institute of Physics [S0003-6951(96)02823-9].
“Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm”; Okamoto et al; Applied Physics Letters 94, 071105 (2009).
“500 nm electrically driven InGaN based laser diodes”; Queren et al; Applied Physics Letters 94; 081119 (2009).
“Superluminescence in green emission GaInN/GaN quantum well structures under pulsed laser excitation”; Senawiratne et al; Material Research Soc. Symp. Proc. vol. 1040 2008 Materials Research Society; 1040-Q05-05.
“MOCVD growth, stimulated emission and time-resolved PL studies of InGaN/(In)GaN MQWs: well and barrier thickness dependence”; Shee et al; Journal of Crystal Growth 221 (2000) 373-377.
“Lasing and optical gain around 500 nm from optically pumped lasers grown on c-plane GaN substrates”; Optics Letters, vol. 34, No. 3, Feb. 1, 2009.
“Measurement of optical loss variation on thickness of InGaN optical confinement layers of blue-violet-emitting laser diodes”; Son et al; Journal of Applied Physics 103, 103101 (2008).
“Stimulated emission at blue-green (480 nm) and green (514 nm) wavelengths from nonpolar (m-plane) and semipolar (1122) InGaN multiple quantum well laser diode structures”; Tyagi et al; Applied Physics Express 1 (2008) 091103.
“Recent progress in high power blue violet lasers”; Uchida et al; MA3 (Invited paper); Development Center, Sony Shiroishi Semiconductor Inc; Japan.
“Polarization switching phenomena in semipolar InxGa1−xN/GaN quantum well active layers”; Physical Review B 78, 233303 (2008).
“Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450-470 nm”; Yablonskii et al; Applied Physics Letters; vol. 79 No. 13; Sep. 24, 2001.
Anisotropic optical matrix elements in strained GaN quantum wells on semipolar and nonpolar substrates; Yamaguchi; Japanese Journal of Applied Physics; vol. 46; No. 33, 2007; L789-L791.
“Theoretical investigation on polarization control of semipolar oriented InGaN quantum well emission using (Al)InGaN alloy substrates”; Yamaguchi; Applied Physics Letters 94, 201104, (2009).
Continuous wave operation of 520 nm green InGaN based laser diodes on semi-polar (2021) GaN substrates; Yoshizumi et al; Applied Physics Express 2 (2009) 092101.

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