Semiconductor optical device

Details Semiconductor optical device Semiconductor optical device

2011-06-07

2011-06-07

Nguyen, Dung T (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010, C372S045012, C372S045013

Reexamination Certificate

active

07957442

ABSTRACT:
An edge-emitting semiconductor optical device comprises a first cladding layer, an active layer, and a second cladding layer. The first cladding layer is provided on a semiconductor substrate. The active layer is provided on the first cladding layer. The semiconductor substrate has a higher band gap than that of the active layer. The first cladding layer includes a first light-absorbing layer and a first light-transmitting layer. The first light-absorbing layer has a lower band gap than that of the active layer, and the first light-transmitting layer has a higher band gap than that of the active layer. The second cladding layer is provided on the active layer.

REFERENCES:
patent: 6731663 (2004-05-01), Kasukawa et al.
patent: 6807214 (2004-10-01), Corzine et al.
patent: 2001-144371 (2001-05-01), None
patent: 2004/027950 (2004-04-01), None
Horie et al., “Longitudinal-Mode Characteristics of Weakly Index-Guided . . . Phenomena”, IEEE Journal of Quantum Electronics, vol. 36, No. 12, Dec. 2000, pp. 1454-1461.

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