Silicon substrate and manufacturing method thereof

Details Silicon substrate and manufacturing method thereof Silicon substrate and manufacturing method thereof

2011-03-29

2011-03-29

Sandvik, Benjamin P (Department: 2826)

Semiconductor device manufacturing: process

Gettering of substrate

C257SE21318

Reexamination Certificate

active

07915145

ABSTRACT:
A silicon substrate is manufactured from single-crystal silicon which is grown to have a carbon concentration equal to or higher than 1.0×1016atoms/cm3and equal to or lower than 1.6×1017atoms/cm3and an initial oxygen concentration equal to or higher than 1.4×1018atoms/cm3and equal to or lower than 1.6×1018atoms/cm3by a CZ method. A device is formed on a front, the thickness of the silicon substrate is equal to or more than 5 μm and equal to or less than 40 μm, and extrinsic gettering which produces residual stress equal to or more than 5 Mpa and equal to or less than 200 Mpa is applied to a back face of the substrate.

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