Light-emitting semiconductor device using group III nitrogen...

Details Light-emitting semiconductor device using group III nitrogen... Light-emitting semiconductor device using group III nitrogen...

2011-01-11

2011-01-11

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S047000

Reexamination Certificate

active

07867800

ABSTRACT:
A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1−x3)y3In1−y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1−x2)y2In1−y2N emission layer (5), and a Mg-doped (Alx1Ga1−x1)y1In1−y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer6has about a 1.0 μm thickness and a 2×1017/cm3hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.

REFERENCES:
patent: 5247533 (1993-09-01), Okazaki et al.
patent: 5281830 (1994-01-01), Kotaki et al.
patent: 5408120 (1995-04-01), Manabe et al.
patent: 5578839 (1996-11-01), Nakamura et al.
patent: 5734182 (1998-03-01), Nakamura et al.
patent: 6265726 (2001-07-01), Manabe et al.
patent: 0607435 (1994-02-01), None
patent: 599224 (1994-06-01), None
patent: 0622858 (1994-11-01), None
patent: 59-102865 (1984-12-01), None
patent: 59-228776 (1984-12-01), None
patent: 2-229475 (1990-09-01), None
patent: 02-264483 (1990-10-01), None
patent: 04-10665 (1992-01-01), None
patent: 410666 (1992-01-01), None
patent: 410667 (1992-01-01), None
patent: 4-68579 (1992-03-01), None
patent: 04-242985 (1992-08-01), None
patent: 432128 (1992-11-01), None
patent: 5291621 (1993-11-01), None
patent: 06-209120 (1994-07-01), None
patent: 06-260680 (1994-09-01), None
patent: 62-68259 (1994-09-01), None
patent: 7162038 (1995-06-01), None
patent: 94/03931 (1994-02-01), None
Nakamura, et al. “P-GaN/N-InGaN/N-GaN Double heterostructure Blue-Light Emitting Diodes”, Japanese J. of Applied Physics, Jan. 1993, vol. 32, No. 1A/B, Part 2, pp. L8-L11.
Nakamura et al., “Candela-class High-Brightness InGaN/A1GaN Double-Heterostructure Blue-Light-Emitting Diodes”, Applied Physics Letters, Mar. 1994, vol. 64, No. 13, pp. 1687-1689.
Nakamura, et al., “High-Brightness InGaN/A1GaN Double-Heterostructure Blue-Green-Light-Emitting Diodes,” J. of Applied Physics, Dec. 1994, vol. 76, No. 12, pp. 8189-8191.
Khan, et al., “Effects of Si on Photoluminescence of GaN,” Solid State Communication, vol. 57, No. 6, pp. 405-409, (1986).
Matsushita, et al., “PN Junction Type SiC Blue Light-Emitting Diodes,” Applied Physics, vol. 60, No. 2, pp. 159-162, Feb. 1991.
Goldenberg, et al. “Ultraviolet and Violet Light-Emitting GaN Diodes Grown by Low-Pressure Metalorgance Chemical Vapor Deposition,” Applied Physics Letters 62, Jan. 25, 1993, No. 4, New York, New York.
Nakamura, et al., “High-Power InGaN/GaN Double-Heterostructure Violet Light Emitting Diodes,” Applied Physics Letters, vol. 62, No. 19, May 10, 1993, pp. 2390-2392.
Patent Abstracts of Japan, vol. 018, No. 080 (E-1505), Feb. 9, 1994 & JP 05 291621 A (Nichia Chem Ind. Ltd.), Nov. 5, 1993.
Patent Abstracts of Japan, vol. 018, No. 507 (E-1609), Sep. 22, 1994 & JP 06 177434 A (Nichia Chem Ind Ltd.) Jun. 24, 1994.

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