Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor
Reexamination Certificate
2011-01-11
2011-01-11
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
C438S107000, C438S118000, C438S123000, C257S700000, C257S766000, C257S774000, C257S633000, C257S632000, C361S794000, C361S077000, C361S778000
Reexamination Certificate
active
07867816
ABSTRACT:
Provided is a method and system for designing an integrated circuit (IC) substrate, the substrate being formed to include at least one die. The method includes providing at least portions of IC power and a grounding function on a metal 2 substrate layer and utilizing all of a metal 3 substrate layer for the grounding function. Portions of the metal 2 layer and a metal 4 layer are utilized for the IC power, wherein all of the IC power is centralized underneath the die.
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Broadcom Corporation
Green Telly D
Sterne Kessler Goldstein & Fox P.L.L.C.
Wilczewski Mary
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