Magnetoresistive device having specular sidewall layers

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field

Reexamination Certificate

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Details

C257SE21665

Reexamination Certificate

active

07872323

ABSTRACT:
A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer is positioned between the specular layer and the sidewall.

REFERENCES:
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patent: 2002/0135956 (2002-09-01), Hasegawa et al.
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patent: 2002/0154538 (2002-10-01), Inui
patent: 2002/0191354 (2002-12-01), Yoshikawa et al.
patent: 2004/0136121 (2004-07-01), Mao et al.

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