Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-07-19
2011-07-19
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S461000, C257SE31001, C438S057000
Reexamination Certificate
active
07982276
ABSTRACT:
An optical semiconductor device is provided with a low concentration p-type silicon substrate (1); a low dopant concentration n-type epitaxial layer (second epitaxial layer) (26); a low dopant concentration p-type anode layer (27); a high concentration n-type cathode contact layer (9); a photodiode (2) made of the anode layer (27) and the cathode contact layer (9); and an NPN transistor (3) formed on the n-type epitaxial layer (26). The anode can be substantially completely depleted in the case where the anode layer (27) has its dopant concentration peak in the vicinity of the interface between the silicon substrate (1) and the n-type epitaxial layer (26). Therefore, high speed and high light receiving sensitivity characteristics can be obtained, and further, any influence of auto-doping from peripheral embedding layers can be controlled, so that a depletion layer can be stably formed in the anode. Thus, a photodiode characterized in its high speed and high light receiving sensitivity for short wavelength light and a transistor characterized in its high speed can be mounted on the same semiconductor substrate.
REFERENCES:
patent: 5770872 (1998-06-01), Arai
patent: 6049118 (2000-04-01), Nagano
patent: 6114740 (2000-09-01), Takimoto et al.
patent: 6184100 (2001-02-01), Arai
patent: 6376871 (2002-04-01), Arai
patent: 6380603 (2002-04-01), Takimoto et al.
patent: 6743652 (2004-06-01), Thomas et al.
patent: 2001/0038096 (2001-11-01), Fukushima et al.
patent: 2003/0080280 (2003-05-01), Takimoto et al.
patent: 2003/0168709 (2003-09-01), Kashiura
patent: 2004/0262619 (2004-12-01), Takahashi et al.
patent: 2007/0254398 (2007-11-01), Wakabayashi et al.
patent: 0 855 743 (1998-07-01), None
patent: 03-091959 (1991-04-01), None
patent: 04-082268 (1992-03-01), None
patent: 09-219534 (1997-08-01), None
patent: 09-307086 (1997-11-01), None
patent: 10-107243 (1998-04-01), None
patent: 2001-135808 (2001-05-01), None
patent: 2001-284629 (2001-10-01), None
patent: 2004-119632 (2004-04-01), None
patent: 2004-172212 (2004-06-01), None
patent: 2005-183722 (2005-07-01), None
Supplementary European Search Report issued in European Patent Application No. EP 07 74 0858 dated Nov. 11, 2009.
Fan Michele
McDermott Will & Emery LLP
Panasonic Corporation
Smith Matthew
LandOfFree
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